A study of the average energy loss to the acoustic modes and the non-ohmic mobility characteristics of a degenerate semiconductor using an alternative model of heated Fermi–Dirac distribution

An analysis has been made to study the effect of degeneracy on the average energy loss rate of the non-equilibrium electrons and the non-ohmic mobility characteristics of a semiconductor at low lattice temperature. Because of the intrinsic complexity of the Fermi function, it is hardly possible to analytically integrate when product and powers of the same are involved. Hence the analysis has been made here in the framework of a simplified, well tested model distribution, in place of the heated Fermi – Dirac distribution. The model paves the way for correct evaluation of the integrals without making any oversimplified approximations. Some of the low temperature features have been considered in the analysis. Due account has been taken of the inelasticity of the collisions of the electrons with the intravalley acoustic phonons and also the complete form of the phonon distribution without truncation to the equipartition law. The numerical results for Si and InSb have been obtained from the present analysis and seem to be significantly different when compared with the results which have been reported earlier, for the non-degenerate samples of the same materials.