Simulation and comparison of current-voltage (IV) characteristics in changing the channel dimensions for nanoscale SiO2 and TiO2 based Pi-gate FinFET

Simulation and comparison of current-voltage (IV) characteristics in changing the channel dimensions for nanoscale SiO2 and TiO2 based Pi-gate FinFET

Simulation, analysis, and comparison of drain current for SiO2 and TiO2 nanolayer based pi-gate FinFET is the focus of this study. The Components and Techniques: With a pretest power of 80% and an error rate of p0.05, a sample size of 26 is determined for each of the two groups under consideration i...

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Bibliographische Detailangaben
Hauptverfasser: Vikas, M., Malathi, K., Azariah, J. Cyril Robinson
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electric potential
Silicon dioxide
Titanium dioxide
Voltage
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Beschreibung
Zusammenfassung:Simulation, analysis, and comparison of drain current for SiO2 and TiO2 nanolayer based pi-gate FinFET is the focus of this study. The Components and Techniques: With a pretest power of 80% and an error rate of p0.05, a sample size of 26 is determined for each of the two groups under consideration in this study. Results: The drain currents and other current/voltage parameters of the pi-gate FinFET were compared statistically. SiO2 has a far higher drain current than TiO2, hence SiO2 is the clear winner.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0197383