Impact of Gamma-Ray radiation on SiO2 hydroxyl cover

Results of studying impact of gamma-rays on adsorptive properties of silicon dioxide (SiO2) of various types are presented in this research paper. Temperature and dose dependencies of adsorption of oxygen and hydrogen on silicon dioxide samples undergone preliminary heat treatment within a temperature range 200-800°C were investigated. Manometric methods, infrared, electron paramagnetic resonance spectrometric methods were used. As a result the following was established: adsorption centers are appearing under exposure to radiation either having paramagnetic properties or without them. Dependence of accumulation of adsorption centers on preliminary annealing temperature and radiation dosage is observed [1-3].