A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors

A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors

We have developed a light-emitting device, called the ZOGAN light-emitting diode (LED). The ZOGAN LED is formed with the p-layer composed of both ZnO-based oxide and GaN-based nitride semiconductors. The ZOGAN LED shows the characteristics of light-emitting devices required for ultra-high-resolution...

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Veröffentlicht in:AIP advances 2024-04, Vol.14 (4), p.045215-045215-6
Hauptverfasser: Ryu, Yung Ryel, Hong, Sung Ki, Schubert, E. Fred, Jeon, Dong-Min, Shin, Dong-Soo, Shim, Jong-In, Kim, Sang-Mook, Baek, Jong Hyeob
Format: Artikel
Sprache:eng
Schlagworte:
Gallium nitrides
Light emitting diodes
Zinc oxide
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Zusammenfassung:We have developed a light-emitting device, called the ZOGAN light-emitting diode (LED). The ZOGAN LED is formed with the p-layer composed of both ZnO-based oxide and GaN-based nitride semiconductors. The ZOGAN LED shows the characteristics of light-emitting devices required for ultra-high-resolution displays.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0192350