Impact of single and stacked insulators on the device performance of gate-all-around TFET for mobile computing applications
A comprehensive study on the behavior of gate-all-around (GAA) Tunnel Field Effect Transistors (TFET) with different dielectrics in single dielectric-based structure as well as stacking structure is reported. The gate-all-around structure is chosen so to have better gate control over the channel ens...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | A comprehensive study on the behavior of gate-all-around (GAA) Tunnel Field Effect Transistors (TFET) with different dielectrics in single dielectric-based structure as well as stacking structure is reported. The gate-all-around structure is chosen so to have better gate control over the channel ensuing better characteristics of the device for the analog parameters investigated. To get the full benefit out of the device, the most optimized value of work-function is chosen. For single dielectrics-based GAA-TFETs, HfO2 outshines all the other dielectrics with ION of 4.34 µA and threshold voltage of 612mV. Furthermore, for the stacking structure, the duo of SiO2-HfO2 aces over the others with ION of 2.74 µA and threshold voltage of 613mV. Moreover, the low OFF-state current and sufficient drive current in stacked structure makes GAA-TFET a suitable contender for low power applications like mobile computing. |
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ISSN: | 0094-243X 1551-7616 |
DOI: | 10.1063/5.0183014 |