CMOS compatible AlN thin films on Si for energy harvesting applications
Aluminum Nitride (AlN) is a piezoelectric material that has recently gained attention for CMOS (complementary metal-oxide semiconductor) compatible MEMS devices. In this report we report on the growth of AlN deposited on glass and silicon (111) at room temperature (CMOS compatible) using reactive DC...
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| creator | Mathews, Ashin Varghese Sandeep Nagaraja, K. K. |
| description | Aluminum Nitride (AlN) is a piezoelectric material that has recently gained attention for CMOS (complementary metal-oxide semiconductor) compatible MEMS devices. In this report we report on the growth of AlN deposited on glass and silicon (111) at room temperature (CMOS compatible) using reactive DC magnetron sputtering. Sputtering is done at a low sputtering power of 30 W with different gas flow rates to minimize the residual stresses. The variation of the film properties is studied in comparison with the change in the flow rate of gas. A distinct change in the orientation from the (100) to (101) plane is observed through XRD analysis. The surface morphology of deposited films has been analyzed using SEM and EDX analysis is done to confirm the composition of the films. |
| doi_str_mv | 10.1063/5.0178053 |
| format | Conference Proceeding |
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K.</creator><contributor>Udupa, D. V. ; Tyagi, Mohit ; Mishra, Ajay Kumar ; Rout, Sanjeeb Kumar</contributor><creatorcontrib>Mathews, Ashin Varghese ; Sandeep ; Nagaraja, K. K. ; Udupa, D. V. ; Tyagi, Mohit ; Mishra, Ajay Kumar ; Rout, Sanjeeb Kumar</creatorcontrib><description>Aluminum Nitride (AlN) is a piezoelectric material that has recently gained attention for CMOS (complementary metal-oxide semiconductor) compatible MEMS devices. In this report we report on the growth of AlN deposited on glass and silicon (111) at room temperature (CMOS compatible) using reactive DC magnetron sputtering. Sputtering is done at a low sputtering power of 30 W with different gas flow rates to minimize the residual stresses. The variation of the film properties is studied in comparison with the change in the flow rate of gas. A distinct change in the orientation from the (100) to (101) plane is observed through XRD analysis. The surface morphology of deposited films has been analyzed using SEM and EDX analysis is done to confirm the composition of the films.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0178053</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum nitride ; CMOS ; Compatibility ; Energy harvesting ; Flow velocity ; Gas flow ; Magnetron sputtering ; Piezoelectricity ; Residual stress ; Room temperature ; Silicon ; Thin films</subject><ispartof>AIP conference proceedings, 2024, Vol.2995 (1)</ispartof><rights>AIP Publishing LLC</rights><rights>2024 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/acp/article-lookup/doi/10.1063/5.0178053$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,794,4512,23930,23931,25140,27924,27925,76384</link.rule.ids></links><search><contributor>Udupa, D. V.</contributor><contributor>Tyagi, Mohit</contributor><contributor>Mishra, Ajay Kumar</contributor><contributor>Rout, Sanjeeb Kumar</contributor><creatorcontrib>Mathews, Ashin Varghese</creatorcontrib><creatorcontrib>Sandeep</creatorcontrib><creatorcontrib>Nagaraja, K. K.</creatorcontrib><title>CMOS compatible AlN thin films on Si for energy harvesting applications</title><title>AIP conference proceedings</title><description>Aluminum Nitride (AlN) is a piezoelectric material that has recently gained attention for CMOS (complementary metal-oxide semiconductor) compatible MEMS devices. In this report we report on the growth of AlN deposited on glass and silicon (111) at room temperature (CMOS compatible) using reactive DC magnetron sputtering. Sputtering is done at a low sputtering power of 30 W with different gas flow rates to minimize the residual stresses. The variation of the film properties is studied in comparison with the change in the flow rate of gas. A distinct change in the orientation from the (100) to (101) plane is observed through XRD analysis. The surface morphology of deposited films has been analyzed using SEM and EDX analysis is done to confirm the composition of the films.</description><subject>Aluminum nitride</subject><subject>CMOS</subject><subject>Compatibility</subject><subject>Energy harvesting</subject><subject>Flow velocity</subject><subject>Gas flow</subject><subject>Magnetron sputtering</subject><subject>Piezoelectricity</subject><subject>Residual stress</subject><subject>Room temperature</subject><subject>Silicon</subject><subject>Thin films</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2024</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotUE1LwzAYDqJgnR78BwFvQuebpOnbHsfQKUx3mIK3kLbJltEvk26wf291Oz2X55uQewZTBql4klNgmIEUFyRiUrIYU5ZekgggT2KeiO9rchPCDoDniFlEFvP31ZqWXdPrwRW1obP6gw5b11Lr6ibQrqVrR23nqWmN3xzpVvuDCYNrN1T3fe3KUde14ZZcWV0Hc3fGCfl6ef6cv8bL1eJtPlvGPRNiiKUp0iJLEREyK5BZw3WWJVZCrgErjmWFWCYWkZtEGAMVJEZWLBc4qnQlJuTh5Nv77mc_FlG7bu_bMVLxnAnJeT6On5DHEyuUbvgvqHrvGu2PioH6O0pJdT5K_ALFrFj6</recordid><startdate>20240112</startdate><enddate>20240112</enddate><creator>Mathews, Ashin Varghese</creator><creator>Sandeep</creator><creator>Nagaraja, K. 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K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p133t-5eb6b8677708f371fe2a884f509a07d27cd77c4f772e43ee0d04e5d1937867ad3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Aluminum nitride</topic><topic>CMOS</topic><topic>Compatibility</topic><topic>Energy harvesting</topic><topic>Flow velocity</topic><topic>Gas flow</topic><topic>Magnetron sputtering</topic><topic>Piezoelectricity</topic><topic>Residual stress</topic><topic>Room temperature</topic><topic>Silicon</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mathews, Ashin Varghese</creatorcontrib><creatorcontrib>Sandeep</creatorcontrib><creatorcontrib>Nagaraja, K. K.</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mathews, Ashin Varghese</au><au>Sandeep</au><au>Nagaraja, K. K.</au><au>Udupa, D. V.</au><au>Tyagi, Mohit</au><au>Mishra, Ajay Kumar</au><au>Rout, Sanjeeb Kumar</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>CMOS compatible AlN thin films on Si for energy harvesting applications</atitle><btitle>AIP conference proceedings</btitle><date>2024-01-12</date><risdate>2024</risdate><volume>2995</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>Aluminum Nitride (AlN) is a piezoelectric material that has recently gained attention for CMOS (complementary metal-oxide semiconductor) compatible MEMS devices. In this report we report on the growth of AlN deposited on glass and silicon (111) at room temperature (CMOS compatible) using reactive DC magnetron sputtering. Sputtering is done at a low sputtering power of 30 W with different gas flow rates to minimize the residual stresses. The variation of the film properties is studied in comparison with the change in the flow rate of gas. A distinct change in the orientation from the (100) to (101) plane is observed through XRD analysis. The surface morphology of deposited films has been analyzed using SEM and EDX analysis is done to confirm the composition of the films.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0178053</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2024, Vol.2995 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_5_0178053 |
| source | AIP Journals Complete |
| subjects | Aluminum nitride CMOS Compatibility Energy harvesting Flow velocity Gas flow Magnetron sputtering Piezoelectricity Residual stress Room temperature Silicon Thin films |
| title | CMOS compatible AlN thin films on Si for energy harvesting applications |
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