CMOS compatible AlN thin films on Si for energy harvesting applications

Aluminum Nitride (AlN) is a piezoelectric material that has recently gained attention for CMOS (complementary metal-oxide semiconductor) compatible MEMS devices. In this report we report on the growth of AlN deposited on glass and silicon (111) at room temperature (CMOS compatible) using reactive DC magnetron sputtering. Sputtering is done at a low sputtering power of 30 W with different gas flow rates to minimize the residual stresses. The variation of the film properties is studied in comparison with the change in the flow rate of gas. A distinct change in the orientation from the (100) to (101) plane is observed through XRD analysis. The surface morphology of deposited films has been analyzed using SEM and EDX analysis is done to confirm the composition of the films.