Comparison of V-I characteristics between MOSFET and MESFET by varying channel length

The project aims to improve the drain characteristics of a novel Metal Semiconductor Field Effect Transistor (MESFET) by reducing the size using nanotechnology and compared with MOSFET. The reduction in the size of the MESFET will be done as per Moore’s law and will lead to an increase in the density of devices on a single chip. The MOSFET and MESFET was chosen as a group having 21 samples each respectively. The drain characteristics were simulated by varying the channel length of a MESFET and MOSFET. Reducing the channel length of a MESFET will lead to reducing the size of the device and G-power is 80%. The Independent t test was done which reveals that the MESFET (p