Analysis of plasma-elastic component of time-domain photoacoustic response

Analysis of plasma-elastic component of time-domain photoacoustic response

The plasma-elastic component of the photoacoustic response in the time-domain of thin semiconductor samples excited by long electromagnetic radiation pulses is analyzed in detail. The plasma-elastic component model assumes that ambipolar diffusion can be approximated by the minority carrier diffusio...

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Veröffentlicht in:Journal of applied physics 2023-06, Vol.133 (23)
Hauptverfasser: Stanimirović, Ivanka, Markushev, Dragana, Stanimirović, Zdravko, Galović, Slobodanka, Djordjević, Katarina
Format: Artikel
Sprache:eng
Schlagworte:
Ambipolar diffusion
Applied physics
Electromagnetic radiation
Electronic properties
Minority carriers
Time domain analysis
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Zusammenfassung:The plasma-elastic component of the photoacoustic response in the time-domain of thin semiconductor samples excited by long electromagnetic radiation pulses is analyzed in detail. The plasma-elastic component model assumes that ambipolar diffusion can be approximated by the minority carrier diffusion. The results obtained show that the plasma-elastic component in thin semiconductor samples affects photoacoustic measurements in the time domain, which is important for the photoacoustic determination of semiconductor electronic properties.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0152713