234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer

Far-ultraviolet-C (far-UVC) light-emitting diodes (LEDs) with an emission wavelength of 234 nm with different polarization-doped AlGaN hole injection layers (HILs) are compared regarding their emission power, voltage, and leakage current. The influence of the thickness of the polarization-doped laye...

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Veröffentlicht in:	Applied physics letters 2023-05, Vol.122 (19)
Hauptverfasser:	Kolbe, Tim, Knauer, Arne, Rass, Jens, Cho, Hyun Kyong, Hagedorn, Sylvia, Bilchenko, Fedir, Muhin, Anton, Ruschel, Jan, Kneissl, Michael, Einfeldt, Sven, Weyers, Markus
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Doping Electric potential Emission Far ultraviolet radiation Leakage current Light emitting diodes Magnesium Polarization Quantum efficiency Thickness Voltage
Online-Zugang:	Volltext
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