Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

In this study, we dry etched SiO2-masked (001) β-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with inner sidewalls of (100) and/or {310} facets, which are the smallest surface-energy-densi...

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Veröffentlicht in:Applied physics letters 2023-04, Vol.122 (16)
Hauptverfasser: Oshima, Takayoshi, Oshima, Yuichi
Format: Artikel
Sprache:eng
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Zusammenfassung:In this study, we dry etched SiO2-masked (001) β-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with inner sidewalls of (100) and/or {310} facets, which are the smallest surface-energy-density plane and oxygen-close-packed slip planes, respectively. In particular, (100) faceted sidewalls were flat and relatively close to the substrate surface normal. Therefore, this simple dry etching method is promising for fabricating plasma-damage-free trenches and fins used for β-Ga2O3-based power devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0138736