Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
In this study, we dry etched SiO2-masked (001) β-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with inner sidewalls of (100) and/or {310} facets, which are the smallest surface-energy-densi...
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Veröffentlicht in: | Applied physics letters 2023-04, Vol.122 (16) |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this study, we dry etched SiO2-masked (001) β-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with inner sidewalls of (100) and/or {310} facets, which are the smallest surface-energy-density plane and oxygen-close-packed slip planes, respectively. In particular, (100) faceted sidewalls were flat and relatively close to the substrate surface normal. Therefore, this simple dry etching method is promising for fabricating plasma-damage-free trenches and fins used for β-Ga2O3-based power devices. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0138736 |