Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy

Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy

III-V lasers based on self-assembled quantum dots (QDs) have attracted widespread interest due to their unique characteristics, including low threshold current density (Jth), low sensitivity to backreflections, and resistance to threading dislocations. While most work to date has focused on 1.3 μm I...

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Veröffentlicht in:Journal of applied physics 2023-03, Vol.133 (10)
Hauptverfasser: Dhingra, Pankul, Muhowski, Aaron J., Li, Brian D., Sun, Yukun, Hool, Ryan D., Wasserman, Daniel, Lee, Minjoo Larry
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium indium phosphides
Annealing
Applied physics
Epitaxial growth
Gallium arsenide
Indium phosphides
Lasers
Molecular beam epitaxy
Optical properties
Optimization
Photoluminescence
Quantum dots
Quantum well lasers
Room temperature
Self-assembly
Substrates
Thermal stability
Threading dislocations
Threshold currents
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Zusammenfassung:III-V lasers based on self-assembled quantum dots (QDs) have attracted widespread interest due to their unique characteristics, including low threshold current density (Jth), low sensitivity to backreflections, and resistance to threading dislocations. While most work to date has focused on 1.3 μm InAs/GaAs QDs, InP QDs have also aroused interest in lasers emitting at visible wavelengths. Molecular beam epitaxy (MBE) enables the growth of high-density InP/AlGaInP QDs on exact (001)-oriented GaAs substrates but requires a relatively low substrate temperature of
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0136621