Investigation of high optical gain in type-I AlSb/InGaAsSb/AlSb nano-scale heterostructure for NIR applications

The paper deals with the effects of well width deviation on optical gain and Optical properties of Gallium Antimony based type-I AlSb/InGaAsSb/AlSb nano-scale heterostructure under different well width have been reported. The behavior of optical gain of AlSb/InGaAsSb/Alsb Nano-Scale Heterostructure in TE and TM mode has also studied. Optical gain has investigated by using six band k.p method. For carrier density 7 x 1012/cm2, the peak optical gain is 6090/cm at the lasing wavelength of ∼1.53 µm (NIR region). Lasing wavelength has redshift and optical gain shifted to greater values with increasing quantum well width. This lasing wavelength can be used for sorting of fruit based on quality and safety, in mines for moisture detection, prediction of soil properties etc. with the property of high optical gain.