High frequency properties of a planar ion trap fabricated on a chip
We report on the measurement of the high frequency properties of a planar Penning ion trap fabricated on a chip. Two types of chips have been measured: the first manufactured by photolithographic metal deposition on a p-doped silicon substrate and the second made with printed circuit board technolog...
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Veröffentlicht in: | Review of scientific instruments 2022-08, Vol.93 (8), p.083202-083202 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report on the measurement of the high frequency properties of a planar Penning ion trap fabricated on a chip. Two types of chips have been measured: the first manufactured by photolithographic metal deposition on a p-doped silicon substrate and the second made with printed circuit board technology on an alumina substrate. The input capacitances and the admittances between the different trap’s electrodes play a critical role in the electronic detection of the trapped particles. The measured input capacitances of the photolithographic chip amount to 65−76 pF, while the values for the printed circuit board chips are in the range of 3−5 pF. The latter are small enough for detecting non-destructively a single trapped electron or ion with a specifically tuned LC resonator. We have also measured a mutual capacitance of ∼85 fF between two of the trap’s electrodes in the printed circuit board chip. This enables the detection of single, or very few, trapped particles in a broader range of charge-to-mass ratios with a simple resistor on the chip. We provide analytic calculations of the capacitances and discuss their origin and possible further reduction. |
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ISSN: | 0034-6748 1089-7623 |
DOI: | 10.1063/5.0091745 |