Highly efficient UV detection in a metal–semiconductor–metal detector with epigraphene

We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T >1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal–semiconductor–metal (MSM) detectors...

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Veröffentlicht in:Applied physics letters 2022-05, Vol.120 (19)
Hauptverfasser: He, Hans, Shetty, Naveen, Kubatkin, Sergey, Stadler, Pascal, Löfwander, Tomas, Fogelström, Mikael, Miranda-Valenzuela, J. C., Yakimova, Rositsa, Bauch, Thilo, Lara-Avila, Samuel
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Sprache:eng
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Zusammenfassung:We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T >1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal–semiconductor–metal (MSM) detectors with a peak external quantum efficiency of η ∼ 85% for wavelengths λ = 250–280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ∼ 50 fA translate into an estimated record high specific detectivity D = 3.5 × 1015 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/5.0090219