Non-asymptotic quantum scattering theory to design high-mobility lateral transition-metal dichalcogenide heterostructures

Atomistic determination of carrier scattering properties is essential for designing nano-electronic devices in two-dimensional (2D) materials. Traditional quantum scattering theory is developed in an asymptotic limit, thus making it inapplicable for 2D materials and heterostructures. Here, we introd...

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Veröffentlicht in:	Journal of applied physics 2022-05, Vol.131 (17)
Hauptverfasser:	Bharadwaj, Sathwik, Ramasubramaniam, Ashwin, Ram-Mohan, L. R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Asymptotic properties Chalcogenides Electron transport Electronic devices Electronic structure First principles Formalism Heterostructures Nanoelectronics Nanotechnology devices Room temperature Scattering Transition metal compounds Two dimensional materials
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