Local defect simulation by means of the distributed circuit modelling
This work features to simulate the effect of local defects in crystalline silicon solar cells by means of the 2D distributed model of the cell using the electronic simulation tool LTSpice®. For that, starting from locally laser damaged cells with known lumped characteristic parameters, the distribut...
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| creator | Otaegi, Alona Cereceda, Eneko Fano, Vanesa Azkona, Nekane Recart, Federico Gutiérrez, José Rubén Jimeno, Juan Carlos |
| description | This work features to simulate the effect of local defects in crystalline silicon solar cells by means of the 2D distributed model of the cell using the electronic simulation tool LTSpice®. For that, starting from locally laser damaged cells with known lumped characteristic parameters, the distributed parameters are obtained. The horizontal voltage distribution of the cells is then simulated according to the elementary cells and adding to the model the effect of the laser induced damage. Simulation results should fit previous EL measurements validating the simulation model. If, apart from laser induced damages other types of local defects are characterised according to the distributed simulation of the cells, the symbiosis between luminescence techniques and 2D distributed simulation could help to a rapid characterization and quantification of damages in crystalline silicon solar cells. |
| doi_str_mv | 10.1063/5.0089323 |
| format | Conference Proceeding |
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For that, starting from locally laser damaged cells with known lumped characteristic parameters, the distributed parameters are obtained. The horizontal voltage distribution of the cells is then simulated according to the elementary cells and adding to the model the effect of the laser induced damage. Simulation results should fit previous EL measurements validating the simulation model. If, apart from laser induced damages other types of local defects are characterised according to the distributed simulation of the cells, the symbiosis between luminescence techniques and 2D distributed simulation could help to a rapid characterization and quantification of damages in crystalline silicon solar cells.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0089323</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Circuits ; Crystal defects ; Crystal structure ; Crystallinity ; Horizontal distribution ; Laser damage ; Parameters ; Photovoltaic cells ; Silicon ; Simulation models ; Solar cells ; Symbiosis ; Two dimensional models</subject><ispartof>AIP conference proceedings, 2022, Vol.2487 (1)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). 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For that, starting from locally laser damaged cells with known lumped characteristic parameters, the distributed parameters are obtained. The horizontal voltage distribution of the cells is then simulated according to the elementary cells and adding to the model the effect of the laser induced damage. Simulation results should fit previous EL measurements validating the simulation model. If, apart from laser induced damages other types of local defects are characterised according to the distributed simulation of the cells, the symbiosis between luminescence techniques and 2D distributed simulation could help to a rapid characterization and quantification of damages in crystalline silicon solar cells.</description><subject>Circuits</subject><subject>Crystal defects</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Horizontal distribution</subject><subject>Laser damage</subject><subject>Parameters</subject><subject>Photovoltaic cells</subject><subject>Silicon</subject><subject>Simulation models</subject><subject>Solar cells</subject><subject>Symbiosis</subject><subject>Two dimensional models</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2022</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotkMtKxDAYhYMoWEcXvkHAndDxT9KkzVKG8QIFNwruQq6aoTebdDFv7-jM6mw-zg2hWwJrAoI98DVAIxllZ6ggnJOyFkScowJAViWt2OclukppB0BlXTcF2raj1R12PnibcYr90ukcxwGbPe69HhIeA87fHruY8hzNkr3DNs52iRn3o_NdF4eva3QRdJf8zUlX6ONp-755Kdu359fNY1tOpGH50IV7aR1YA446w2orBLPGAgfnPBNQuUZoZ6khREOwQevK-MArGrwLkrAVujv6TvP4s_iU1W5c5uEQqWgNvKmlkPJA3R-pZGP-X6OmOfZ63isC6u8mxdXpJvYLh5ha8g</recordid><startdate>20220824</startdate><enddate>20220824</enddate><creator>Otaegi, Alona</creator><creator>Cereceda, Eneko</creator><creator>Fano, Vanesa</creator><creator>Azkona, Nekane</creator><creator>Recart, Federico</creator><creator>Gutiérrez, José Rubén</creator><creator>Jimeno, Juan Carlos</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20220824</creationdate><title>Local defect simulation by means of the distributed circuit modelling</title><author>Otaegi, Alona ; Cereceda, Eneko ; Fano, Vanesa ; Azkona, Nekane ; Recart, Federico ; Gutiérrez, José Rubén ; Jimeno, Juan Carlos</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p183t-765e9cd0cb0d2db37c663cbc050dde3604d86adc2b11a0fcfaa4bef542fedf913</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Circuits</topic><topic>Crystal defects</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>Horizontal distribution</topic><topic>Laser damage</topic><topic>Parameters</topic><topic>Photovoltaic cells</topic><topic>Silicon</topic><topic>Simulation models</topic><topic>Solar cells</topic><topic>Symbiosis</topic><topic>Two dimensional models</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Otaegi, Alona</creatorcontrib><creatorcontrib>Cereceda, Eneko</creatorcontrib><creatorcontrib>Fano, Vanesa</creatorcontrib><creatorcontrib>Azkona, Nekane</creatorcontrib><creatorcontrib>Recart, Federico</creatorcontrib><creatorcontrib>Gutiérrez, José Rubén</creatorcontrib><creatorcontrib>Jimeno, Juan Carlos</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Otaegi, Alona</au><au>Cereceda, Eneko</au><au>Fano, Vanesa</au><au>Azkona, Nekane</au><au>Recart, Federico</au><au>Gutiérrez, José Rubén</au><au>Jimeno, Juan Carlos</au><au>Poortmans, Jef</au><au>Brendel, Rolf</au><au>Ballif, Christophe</au><au>Weeber, Arthur</au><au>Hahn, Giso</au><au>Dubois, Sébastien</au><au>Verlinden, Pierre</au><au>Glunz, Stefan</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Local defect simulation by means of the distributed circuit modelling</atitle><btitle>AIP conference proceedings</btitle><date>2022-08-24</date><risdate>2022</risdate><volume>2487</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>This work features to simulate the effect of local defects in crystalline silicon solar cells by means of the 2D distributed model of the cell using the electronic simulation tool LTSpice®. For that, starting from locally laser damaged cells with known lumped characteristic parameters, the distributed parameters are obtained. The horizontal voltage distribution of the cells is then simulated according to the elementary cells and adding to the model the effect of the laser induced damage. Simulation results should fit previous EL measurements validating the simulation model. If, apart from laser induced damages other types of local defects are characterised according to the distributed simulation of the cells, the symbiosis between luminescence techniques and 2D distributed simulation could help to a rapid characterization and quantification of damages in crystalline silicon solar cells.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0089323</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2022, Vol.2487 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_5_0089323 |
| source | AIP Journals Complete |
| subjects | Circuits Crystal defects Crystal structure Crystallinity Horizontal distribution Laser damage Parameters Photovoltaic cells Silicon Simulation models Solar cells Symbiosis Two dimensional models |
| title | Local defect simulation by means of the distributed circuit modelling |
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