Local defect simulation by means of the distributed circuit modelling

This work features to simulate the effect of local defects in crystalline silicon solar cells by means of the 2D distributed model of the cell using the electronic simulation tool LTSpice®. For that, starting from locally laser damaged cells with known lumped characteristic parameters, the distributed parameters are obtained. The horizontal voltage distribution of the cells is then simulated according to the elementary cells and adding to the model the effect of the laser induced damage. Simulation results should fit previous EL measurements validating the simulation model. If, apart from laser induced damages other types of local defects are characterised according to the distributed simulation of the cells, the symbiosis between luminescence techniques and 2D distributed simulation could help to a rapid characterization and quantification of damages in crystalline silicon solar cells.