High gradient silicon carbide immersion lens ultrafast electron sources

We present two compact ultrafast electron injector designs with integrated focusing that provide high peak brightness of up to 1.9 × 1012 A/m2 Sr2 with 10’s of electrons per laser pulse using silicon carbide electrodes and silicon nanotip emitters. We demonstrate a few centimeter scale 96 keV immers...

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Veröffentlicht in:Journal of applied physics 2022-04, Vol.131 (13)
Hauptverfasser: Leedle, Kenneth J., Niedermayer, Uwe, Skär, Eric, Urbanek, Karel, Miao, Yu, Broaddus, Payton, Solgaard, Olav, Byer, Robert L.
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Sprache:eng
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Zusammenfassung:We present two compact ultrafast electron injector designs with integrated focusing that provide high peak brightness of up to 1.9 × 1012 A/m2 Sr2 with 10’s of electrons per laser pulse using silicon carbide electrodes and silicon nanotip emitters. We demonstrate a few centimeter scale 96 keV immersion lens electron source and a 57 keV immersion lens electron source with a 19 kV/mm average acceleration gradient, nearly double the typical 10 kV/mm used in DC electron sources. The brightness of the electron sources is measured alongside start-to-end simulations including space charge effects. These sources are suitable for dielectric laser accelerator experiments, ultrafast electron diffraction, and other applications, where a compact high brightness electron source is required.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0086321