1 GeV proton damage in β-Ga2O3

1 GeV proton damage in β-Ga2O3

The changes of electrical properties and deep trap spectra induced in n-type β-Ga2O3 by 1 GeV protons with a fluence of 4 × 1013 cm−2 were studied. The carrier removal rates were ∼100 cm−1 at this energy. For comparison, for 20 MeV proton irradiation at comparable fluences (5–10 × 1014 cm−2), the re...

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Veröffentlicht in:Journal of applied physics 2021-11, Vol.130 (18)
Hauptverfasser: Polyakov, A. Y., Shchemerov, I. V., Vasilev, A. A., Kochkova, A. I., Smirnov, N. B., Chernykh, A. V., Yakimov, E. B., Lagov, P. B., Pavlov, Yu. S., Ivanov, E. M., Gorbatkova, O. G., Drenin, A. S., Letovaltseva, M. E., Xian, Minghan, Ren, Fan, Kim, Jihyun, Pearton, S. J.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Deep level transient spectroscopy
Electrical properties
Fluence
Gallium oxides
Hole traps
Proton damage
Proton irradiation
Spectrum analysis
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Zusammenfassung:The changes of electrical properties and deep trap spectra induced in n-type β-Ga2O3 by 1 GeV protons with a fluence of 4 × 1013 cm−2 were studied. The carrier removal rates were ∼100 cm−1 at this energy. For comparison, for 20 MeV proton irradiation at comparable fluences (5–10 × 1014 cm−2), the removal rate was ∼400 cm−1 for donor concentrations of 3 × 1016 cm−3 and ∼100 cm−1 for concentrations of
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0068306