Diagnosis and analysis of laser induced plasma parameters for silicon carbide produced by Nd:YAG laser

In this work, we used the optical emission spectrum technique to analyze the spectrum resulting from the Si:C plasma produced by laser Nd:YAG with a wavelength of (1064) nm, duration of (9) ns, and a focal length of (10) cm in the range of energy (400- 800) mJ. The electron temperature (Te) was calculated in the Boltzmann plot method, while the electron density (ne) was calculated using a stark broadening line profile, also another plasma parameters were calculated such as plasma (fp), Debye length (λD) and Debye number (ND). At mixing ratios (X= 0.5), the Si:C plasma spectrum was recorded for different energies. The change in electron temperature and the densities was studied as a function of the laser energies.