Origin of the high-temperature ferromagnetism in Co-doped PbPdO2 semiconductors: A theoretical and experimental study

High-temperature ferromagnetism has always been a classic and interesting subject, especially in spin gapless semiconductor PbPdO 2 with exotic properties. Here, a combination of theoretical and experimental studies was employed to clarify the origin of high Tc. First, based on first-principles calc...

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Veröffentlicht in:Journal of applied physics 2021-08, Vol.130 (5)
Hauptverfasser: Yang, Yanmin, Zhang, Jian-Min, Jia, Hai, Zhong, Kehua, Xu, Guigui, Huang, Zhigao
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Sprache:eng
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Zusammenfassung:High-temperature ferromagnetism has always been a classic and interesting subject, especially in spin gapless semiconductor PbPdO 2 with exotic properties. Here, a combination of theoretical and experimental studies was employed to clarify the origin of high Tc. First, based on first-principles calculations, electronic band structures of PbPd 0.875Co 0.125O 2 at different Co substitution positions were studied. Our results indicate that Co atoms tend to form an antiferromagnetic ground state due to the Co–O–Co (180 °) indirect exchange effect, while ferromagnetism is favored in Co-doped PbPdO 2 when a unique molecular field effect induced band crossover and p– d coupling occurs. It is revealed that metallic or semiconductor properties have an important connection with ferromagnetism or antiferromagnetism. Subsequently, a Monte Carlo simulation was carried out based on the first-principles results to predict the ferromagnetism of PbPd 0.875Co 0.125O 2. Finally, the moment-magnetic field and moment-temperature curves were also measured for PbPd 0.875Co 0.125O 2 samples, which was found well consistent with the theoretical findings. The ground state of PbPd 0.875Co 0.125O 2 was confirmed to be ferromagnetic. Our results well explain the origin of high-temperature ferromagnetism in diluted magnetic semiconductors and provide new approaches for the design of future high Tc spintronic devices.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0057491