Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β-Ga2O3 Schottky rectifiers

Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited...

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Veröffentlicht in:Applied physics letters 2021-05, Vol.118 (20)
Hauptverfasser: Modak, Sushrut, Chernyak, Leonid, Schulte, Alfons, Xian, Minghan, Ren, Fan, Pearton, Stephen J., Lubomirsky, Igor, Ruzin, Arie, Kosolobov, Sergey S., Drachev, Vladimir P.
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Sprache:eng
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Zusammenfassung:Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77–295 K temperature range.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0052601