Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

Realizing telecom-band lasing in GaAs-based nanowires (NW) with low bandgap gain media has proven to be notoriously difficult due to the high compressive strain built up in the active regions. Here, we demonstrate an advanced coaxial GaAs-InGaAs multi-quantum well (MQW) nanowire laser that solves previous limitations by the introduction of a strain compensating InAlGaAs buffer layer between the GaAs core and the MQW active region. Using a buffer layer thickness comparable to the core diameter applies a significant tensile strain to the GaAs core which efficiently minimizes the compressive strain in the InGaAs MQW and enables large In-content without plastic relaxation. Experimental verification is shown for NW-lasers with an In-content of up to 40% in the MQW, evidencing a clear strain-relieved redshift of the lasing emission and a strong reduction of the lasing threshold compared to highly strained MQWs in state-of-the-art GaAs NW-lasers. This way we achieve optically pumped room temperature lasing operation with a threshold below 50 μJ cm−2 in the telecom O-band close to 1.3 μm.