Study of structural and electronic properties of a topological insulator Bi1.1Sb0.9Te2S
We have grown the phase-homogeneous quaternary compound Bi1.1Sb0.9Te2S by the addition of Sb to Bi2Te2S which changed the conductivity from n- to p-type. Far-infrared optical and angle resolved photoemission spectra revealed a wide-band-gap three-dimensional topological insulator phase. The surface...
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| creator | Khatchenko, Yu. E. Yakushev, M. V. Seibel, C. Orlita, M. Golyashov, V. Ponosov, Y. S. Mudriy, A. V. Kokh, K. A. Reinert, F. Tereshchenko, O. E. Kuznetsova, T. V. |
| description | We have grown the phase-homogeneous quaternary compound Bi1.1Sb0.9Te2S by the addition of Sb to Bi2Te2S which changed the conductivity from n- to p-type. Far-infrared optical and angle resolved photoemission spectra revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state with Dirac point located above the valence band. |
| doi_str_mv | 10.1063/5.0033191 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_5_0033191</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2468427001</sourcerecordid><originalsourceid>FETCH-LOGICAL-p218t-9d12279cf26035680d40f927ef2e307e7d36c38547200680b9fe8384cf7467ec3</originalsourceid><addsrcrecordid>eNotkEtLxDAcxIMouK4e_AYBb0LrP4_mcdTFFyx46IreSjdNJEttapIe9tvbZfc0h_kxMwxCtwRKAoI9VCUAY0STM7QgVUUKKYg4RwsAzQvK2fclukppB0C1lGqBvuo8dXscHE45TiZPse1xO3TY9tbkGAZv8BjDaGP2Nh24Fucwhj78eDOjfkhT3-YQ8ZMnJam3UOqNpfU1unBtn-zNSZfo8-V5s3or1h-v76vHdTFSonKhO0Kp1MZRAawSCjoOTlNpHbUMpJUdE4apiksKMNtb7axiihsnuZDWsCW6O-bOI_8mm3KzC1Mc5sqGcqE4lQBkpu6PVDI-t9mHoRmj_23jviHQHI5rquZ0HPsHWEBd2A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>2468427001</pqid></control><display><type>conference_proceeding</type><title>Study of structural and electronic properties of a topological insulator Bi1.1Sb0.9Te2S</title><source>AIP Journals Complete</source><creator>Khatchenko, Yu. E. ; Yakushev, M. V. ; Seibel, C. ; Orlita, M. ; Golyashov, V. ; Ponosov, Y. S. ; Mudriy, A. V. ; Kokh, K. A. ; Reinert, F. ; Tereshchenko, O. E. ; Kuznetsova, T. V.</creator><contributor>Smirnov, Andrey A. ; Narkhov, Evgeniy D. ; Volkovich, Vladimir A. ; Kashin, Ilya V.</contributor><creatorcontrib>Khatchenko, Yu. E. ; Yakushev, M. V. ; Seibel, C. ; Orlita, M. ; Golyashov, V. ; Ponosov, Y. S. ; Mudriy, A. V. ; Kokh, K. A. ; Reinert, F. ; Tereshchenko, O. E. ; Kuznetsova, T. V. ; Smirnov, Andrey A. ; Narkhov, Evgeniy D. ; Volkovich, Vladimir A. ; Kashin, Ilya V.</creatorcontrib><description>We have grown the phase-homogeneous quaternary compound Bi1.1Sb0.9Te2S by the addition of Sb to Bi2Te2S which changed the conductivity from n- to p-type. Far-infrared optical and angle resolved photoemission spectra revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state with Dirac point located above the valence band.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0033191</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Antimony ; Electronic properties ; Far infrared radiation ; Photoelectric emission ; Topological insulators ; Valence band</subject><ispartof>AIP conference proceedings, 2020, Vol.2313 (1)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/acp/article-lookup/doi/10.1063/5.0033191$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,790,4498,23909,23910,25118,27901,27902,76353</link.rule.ids></links><search><contributor>Smirnov, Andrey A.</contributor><contributor>Narkhov, Evgeniy D.</contributor><contributor>Volkovich, Vladimir A.</contributor><contributor>Kashin, Ilya V.</contributor><creatorcontrib>Khatchenko, Yu. E.</creatorcontrib><creatorcontrib>Yakushev, M. V.</creatorcontrib><creatorcontrib>Seibel, C.</creatorcontrib><creatorcontrib>Orlita, M.</creatorcontrib><creatorcontrib>Golyashov, V.</creatorcontrib><creatorcontrib>Ponosov, Y. S.</creatorcontrib><creatorcontrib>Mudriy, A. V.</creatorcontrib><creatorcontrib>Kokh, K. A.</creatorcontrib><creatorcontrib>Reinert, F.</creatorcontrib><creatorcontrib>Tereshchenko, O. E.</creatorcontrib><creatorcontrib>Kuznetsova, T. V.</creatorcontrib><title>Study of structural and electronic properties of a topological insulator Bi1.1Sb0.9Te2S</title><title>AIP conference proceedings</title><description>We have grown the phase-homogeneous quaternary compound Bi1.1Sb0.9Te2S by the addition of Sb to Bi2Te2S which changed the conductivity from n- to p-type. Far-infrared optical and angle resolved photoemission spectra revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state with Dirac point located above the valence band.</description><subject>Antimony</subject><subject>Electronic properties</subject><subject>Far infrared radiation</subject><subject>Photoelectric emission</subject><subject>Topological insulators</subject><subject>Valence band</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2020</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotkEtLxDAcxIMouK4e_AYBb0LrP4_mcdTFFyx46IreSjdNJEttapIe9tvbZfc0h_kxMwxCtwRKAoI9VCUAY0STM7QgVUUKKYg4RwsAzQvK2fclukppB0C1lGqBvuo8dXscHE45TiZPse1xO3TY9tbkGAZv8BjDaGP2Nh24Fucwhj78eDOjfkhT3-YQ8ZMnJam3UOqNpfU1unBtn-zNSZfo8-V5s3or1h-v76vHdTFSonKhO0Kp1MZRAawSCjoOTlNpHbUMpJUdE4apiksKMNtb7axiihsnuZDWsCW6O-bOI_8mm3KzC1Mc5sqGcqE4lQBkpu6PVDI-t9mHoRmj_23jviHQHI5rquZ0HPsHWEBd2A</recordid><startdate>20201209</startdate><enddate>20201209</enddate><creator>Khatchenko, Yu. E.</creator><creator>Yakushev, M. V.</creator><creator>Seibel, C.</creator><creator>Orlita, M.</creator><creator>Golyashov, V.</creator><creator>Ponosov, Y. S.</creator><creator>Mudriy, A. V.</creator><creator>Kokh, K. A.</creator><creator>Reinert, F.</creator><creator>Tereshchenko, O. E.</creator><creator>Kuznetsova, T. V.</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20201209</creationdate><title>Study of structural and electronic properties of a topological insulator Bi1.1Sb0.9Te2S</title><author>Khatchenko, Yu. E. ; Yakushev, M. V. ; Seibel, C. ; Orlita, M. ; Golyashov, V. ; Ponosov, Y. S. ; Mudriy, A. V. ; Kokh, K. A. ; Reinert, F. ; Tereshchenko, O. E. ; Kuznetsova, T. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p218t-9d12279cf26035680d40f927ef2e307e7d36c38547200680b9fe8384cf7467ec3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Antimony</topic><topic>Electronic properties</topic><topic>Far infrared radiation</topic><topic>Photoelectric emission</topic><topic>Topological insulators</topic><topic>Valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khatchenko, Yu. E.</creatorcontrib><creatorcontrib>Yakushev, M. V.</creatorcontrib><creatorcontrib>Seibel, C.</creatorcontrib><creatorcontrib>Orlita, M.</creatorcontrib><creatorcontrib>Golyashov, V.</creatorcontrib><creatorcontrib>Ponosov, Y. S.</creatorcontrib><creatorcontrib>Mudriy, A. V.</creatorcontrib><creatorcontrib>Kokh, K. A.</creatorcontrib><creatorcontrib>Reinert, F.</creatorcontrib><creatorcontrib>Tereshchenko, O. E.</creatorcontrib><creatorcontrib>Kuznetsova, T. V.</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khatchenko, Yu. E.</au><au>Yakushev, M. V.</au><au>Seibel, C.</au><au>Orlita, M.</au><au>Golyashov, V.</au><au>Ponosov, Y. S.</au><au>Mudriy, A. V.</au><au>Kokh, K. A.</au><au>Reinert, F.</au><au>Tereshchenko, O. E.</au><au>Kuznetsova, T. V.</au><au>Smirnov, Andrey A.</au><au>Narkhov, Evgeniy D.</au><au>Volkovich, Vladimir A.</au><au>Kashin, Ilya V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Study of structural and electronic properties of a topological insulator Bi1.1Sb0.9Te2S</atitle><btitle>AIP conference proceedings</btitle><date>2020-12-09</date><risdate>2020</risdate><volume>2313</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>We have grown the phase-homogeneous quaternary compound Bi1.1Sb0.9Te2S by the addition of Sb to Bi2Te2S which changed the conductivity from n- to p-type. Far-infrared optical and angle resolved photoemission spectra revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state with Dirac point located above the valence band.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0033191</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2020, Vol.2313 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_5_0033191 |
| source | AIP Journals Complete |
| subjects | Antimony Electronic properties Far infrared radiation Photoelectric emission Topological insulators Valence band |
| title | Study of structural and electronic properties of a topological insulator Bi1.1Sb0.9Te2S |
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