Study of structural and electronic properties of a topological insulator Bi1.1Sb0.9Te2S

Study of structural and electronic properties of a topological insulator Bi1.1Sb0.9Te2S

We have grown the phase-homogeneous quaternary compound Bi1.1Sb0.9Te2S by the addition of Sb to Bi2Te2S which changed the conductivity from n- to p-type. Far-infrared optical and angle resolved photoemission spectra revealed a wide-band-gap three-dimensional topological insulator phase. The surface...

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Hauptverfasser: Khatchenko, Yu. E., Yakushev, M. V., Seibel, C., Orlita, M., Golyashov, V., Ponosov, Y. S., Mudriy, A. V., Kokh, K. A., Reinert, F., Tereshchenko, O. E., Kuznetsova, T. V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Antimony
Electronic properties
Far infrared radiation
Photoelectric emission
Topological insulators
Valence band
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Zusammenfassung:We have grown the phase-homogeneous quaternary compound Bi1.1Sb0.9Te2S by the addition of Sb to Bi2Te2S which changed the conductivity from n- to p-type. Far-infrared optical and angle resolved photoemission spectra revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state with Dirac point located above the valence band.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0033191