Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study in β-Ga2O3

The reverse leakage current through a Schottky barrier transitions from a thermionic emission-dominated regime to a barrier tunneling-dominated regime as the surface electric field increases. In this study, we evaluate such a transition electric field (ET) in β-Ga2O3 using a numerical reverse leakage model. ET is found to depend on temperature but has an extremely weak dependence on the doping concentration and the barrier height; as a result, a simple empirical expression can be derived to capture this near-universal dependence of ET on temperature. With the help of a field-plate design, we observed experimentally in lightly doped Ga2O3 Schottky barrier diodes near-ideal bulk reverse leakage characteristics, which match well with our numerical model and that confirm the presence of the transition region. Near the transition electric field, both thermionic emission and barrier tunneling should be considered. This study provides important guidance toward accurate design and modeling of Schottky barrier diodes, which can be readily extended to other semiconductors.