High-responsivity PtSe2 photodetector enhanced by photogating effect
Platinum diselenide (PtSe2), a recently rediscovered two-dimensional transition metal dichalcogenide, has attracted immense attention in the optoelectronic field due to its tunable bandgap, ultrastability, and high electron mobility. However, the applications of PtSe2 photodetectors are seriously re...
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| Veröffentlicht in: | Applied physics letters 2021-01, Vol.118 (1) |
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| creator | Yang, Yajie Li, Jinshu Choi, Seunghyuk Jeon, Sumin Cho, Jeong Ho Lee, Byoung Hun Lee, Sungjoo |
| description | Platinum diselenide (PtSe2), a recently rediscovered two-dimensional transition metal dichalcogenide, has attracted immense attention in the optoelectronic field due to its tunable bandgap, ultrastability, and high electron mobility. However, the applications of PtSe2 photodetectors are seriously restricted by their low responsivity. In this work, a high-responsivity (5 × 104 A/W) PtSe2 photodetector is obtained by exploiting a photogating effect; this is induced by the hole-trapping states, which are attributed to Se vacancies. Moreover, a gate-tunable transition between the positive and negative photoconductances is observed under light illumination. A theoretical calculation based on the Boltzmann transport theory is performed to explain the carrier transport of PtSe2, considering the contributions of charged impurity, acoustic phonon, and polar optical phonon scattering. |
| doi_str_mv | 10.1063/5.0025884 |
| format | Article |
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However, the applications of PtSe2 photodetectors are seriously restricted by their low responsivity. In this work, a high-responsivity (5 × 104 A/W) PtSe2 photodetector is obtained by exploiting a photogating effect; this is induced by the hole-trapping states, which are attributed to Se vacancies. Moreover, a gate-tunable transition between the positive and negative photoconductances is observed under light illumination. A theoretical calculation based on the Boltzmann transport theory is performed to explain the carrier transport of PtSe2, considering the contributions of charged impurity, acoustic phonon, and polar optical phonon scattering.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0025884</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Carrier transport ; Electron mobility ; Energy gap ; Optoelectronics ; Phonons ; Photometers ; Platinum ; Transition metal compounds ; Transport theory</subject><ispartof>Applied physics letters, 2021-01, Vol.118 (1)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). 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However, the applications of PtSe2 photodetectors are seriously restricted by their low responsivity. In this work, a high-responsivity (5 × 104 A/W) PtSe2 photodetector is obtained by exploiting a photogating effect; this is induced by the hole-trapping states, which are attributed to Se vacancies. Moreover, a gate-tunable transition between the positive and negative photoconductances is observed under light illumination. A theoretical calculation based on the Boltzmann transport theory is performed to explain the carrier transport of PtSe2, considering the contributions of charged impurity, acoustic phonon, and polar optical phonon scattering.</description><subject>Applied physics</subject><subject>Carrier transport</subject><subject>Electron mobility</subject><subject>Energy gap</subject><subject>Optoelectronics</subject><subject>Phonons</subject><subject>Photometers</subject><subject>Platinum</subject><subject>Transition metal compounds</subject><subject>Transport theory</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqd0N9LwzAQB_AgCs7pg_9BwSeFzrukadNHmT8mDBTU59Cl161Dm5pkg_73Rjrw3afjuA933JexS4QZQi5u5QyAS6WyIzZBKIpUIKpjNgEAkealxFN25v02tpILMWH3i3a9SR353na-3bdhSF7DG_Gk39hgawpkgnUJdZuqM1Qnq2GcrKvQduuEmiaCc3bSVJ-eLg51yj4eH97ni3T58vQ8v1umhssipAagLEsi4shVo2pQSFyVQIUoKlzFYRWbssgVV1zmBlYcUGBTI2GGKhNTdjXu7Z393pEPemt3rosnNc8KiUpwiVFdj8o4672jRveu_arcoBH0b0ha6kNI0d6M1ps2xJds9z-8t-4P6r5uxA8si3OS</recordid><startdate>20210104</startdate><enddate>20210104</enddate><creator>Yang, Yajie</creator><creator>Li, Jinshu</creator><creator>Choi, Seunghyuk</creator><creator>Jeon, Sumin</creator><creator>Cho, Jeong Ho</creator><creator>Lee, Byoung Hun</creator><creator>Lee, Sungjoo</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-4540-7731</orcidid><orcidid>https://orcid.org/0000-0003-1284-3593</orcidid></search><sort><creationdate>20210104</creationdate><title>High-responsivity PtSe2 photodetector enhanced by photogating effect</title><author>Yang, Yajie ; Li, Jinshu ; Choi, Seunghyuk ; Jeon, Sumin ; Cho, Jeong Ho ; Lee, Byoung Hun ; Lee, Sungjoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-c00999eee2128f8d081e2890e737a1b099a90e976828256c0b20131fd1e141843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Applied physics</topic><topic>Carrier transport</topic><topic>Electron mobility</topic><topic>Energy gap</topic><topic>Optoelectronics</topic><topic>Phonons</topic><topic>Photometers</topic><topic>Platinum</topic><topic>Transition metal compounds</topic><topic>Transport theory</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Yajie</creatorcontrib><creatorcontrib>Li, Jinshu</creatorcontrib><creatorcontrib>Choi, Seunghyuk</creatorcontrib><creatorcontrib>Jeon, Sumin</creatorcontrib><creatorcontrib>Cho, Jeong Ho</creatorcontrib><creatorcontrib>Lee, Byoung Hun</creatorcontrib><creatorcontrib>Lee, Sungjoo</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Yajie</au><au>Li, Jinshu</au><au>Choi, Seunghyuk</au><au>Jeon, Sumin</au><au>Cho, Jeong Ho</au><au>Lee, Byoung Hun</au><au>Lee, Sungjoo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-responsivity PtSe2 photodetector enhanced by photogating effect</atitle><jtitle>Applied physics letters</jtitle><date>2021-01-04</date><risdate>2021</risdate><volume>118</volume><issue>1</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Platinum diselenide (PtSe2), a recently rediscovered two-dimensional transition metal dichalcogenide, has attracted immense attention in the optoelectronic field due to its tunable bandgap, ultrastability, and high electron mobility. 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Carrier transport Electron mobility Energy gap Optoelectronics Phonons Photometers Platinum Transition metal compounds Transport theory |
| title | High-responsivity PtSe2 photodetector enhanced by photogating effect |
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