Ultrafast dynamics and short-lived carriers in Cu nitride and oxynitride layers

Ultrafast carrier dynamics in copper nitride (Cu3N) have been investigated using femtosecond pump-probe spectroscopy. Cu3N films were prepared on fused SiO2 substrates coated with thin Cu layers under NH3:O2 flow. The obtained differential transmission data revealed discrete maxima in the spectra at different probing energies. Lower energy maxima are attributed to direct bandgap transitions, while transient transmission peaks at higher energies are due to probing defect state transitions in the material. These states originate from crystalline structure defects and are energetically located close to the conduction and valence bands. The recombination times extracted from the data were of the order of few picoseconds which raises the question of how suitable this material is for energy conversion applications. Ultrafast pump-probe spectra obtained at a low temperature of 78 K revealed almost no shifting of the transition energies compared to room temperature spectra, although small differences in decay times were observed due to the absence of thermal effects. Measurements using longer probing wavelengths in the infrared region indicated state filling of defect states within the bandgap for wavelengths between 800 nm and 1400 nm while probing at longer wavelengths (1400–1600 nm) revealed initial free-carrier absorption and re-excitation of carriers to higher energy defect states above the conduction band. In addition, copper oxynitride layers were produced and studied in a similar fashion to investigate the effects of oxygen on the band structure and recombination times.