Bistability and metastability of oxygen vacancies in amorphous Al2O3: A possible origin of resistance switching mechanism

Vacancies in oxides play important roles in material performances of electronic devices, and they are recently considered to be a source of the bistable resistance switching effects of amorphous oxides. Here, we show theoretically that an O vacancy in amorphous alumina has two distinct types of atom...

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Veröffentlicht in:	Applied physics letters 2020-09, Vol.117 (10)
Hauptverfasser:	Momida, Hiroyoshi, Ohno, Takahisa
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Applied physics Bistability Crystal structure Electronic devices Lattice vacancies Switching Vacancies
Online-Zugang:	Volltext
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