Bistability and metastability of oxygen vacancies in amorphous Al2O3: A possible origin of resistance switching mechanism
Vacancies in oxides play important roles in material performances of electronic devices, and they are recently considered to be a source of the bistable resistance switching effects of amorphous oxides. Here, we show theoretically that an O vacancy in amorphous alumina has two distinct types of atom...
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Veröffentlicht in: | Applied physics letters 2020-09, Vol.117 (10), Article 103504 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Vacancies in oxides play important roles in material performances of electronic devices, and they are recently considered to be a source of the bistable resistance switching effects of amorphous oxides. Here, we show theoretically that an O vacancy in amorphous alumina has two distinct types of atomic and electronic structures with an energy barrier between them when neutrally charged, acting to be a microscopic switcher between deep and shallow levels in the bandgap as a bistable defect. It is also found that such a bistable switching of O vacancy states does not work in the α-Al2O3 crystal, unveiling a peculiar nature to amorphous structures. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0021627 |