Si-matched BxGa1−xP grown via hybrid solid- and gas-source molecular beam epitaxy

The growth of BxGa1−xP alloys by hybrid solid/gas-source molecular beam epitaxy, with B supplied via the BCl3 gas precursor, is demonstrated. Compositional control ranging from pure GaP to B0.045Ga0.955P has thus far been achieved. Slightly tensile-strained B0.031Ga0.969P grown on nearly pseudomorphic, compressively strained GaP/Si was used to produce an effectively strain-free (0.06% tensile misfit at growth temperature) 160 nm total III–V thickness BxGa1−xP/Si virtual substrate with a threading dislocation density of