A cost-effective liquid phase exfoliation process for large 2D-MoS2 nanosheets and its application in FET

2D-TMDC materials are supposed to be suitable materials for the electronic industry requirements due to tunable bandgap. 2D-MoS2 has an advantage over the graphene as it has direct bandgap and high on/off ratio. In this work, 2D-MoS2 nanostructures have been synthesized using a simple and cost-effective liquid phase exfoliation (LPE) method in the organic solvent without any additives. The synthesized MoS2 has up to 4-layer thick nanosheets structure which is confirm by the FESEM and Raman studies. From the UV-Visible absorption spectroscopy, the bandgap of the material is found to be 1.79 eV. This synthesized material is used as the channel material in the field effect transistor. The field effect transistor (FET) device have been fabricated in the top-gate configuration. It has been found that the current on/off ratio is of the order of 104.