Evaluation of optoelectronic properties of Nd: YAG laser deposited rGO thin film for n-type transparent electrode applications

Transparent conducting thin films of reduced graphene oxide (rGO) have been grown on the glass substrate by employing Nd-YAG pulsed laser deposition technique at relatively low temperature of 600 °C. Uniform thin film of rGO is formed on the glass substrate in the presence of oxygen atmosphere by varying the number of laser pulses. The growth condition of rGO thin film is optimised and the electrical studies have been carried out for the film having highest transmission in the UV-V is region. The structural, optical, and electrical properties were studied. The XRD pattern shows the amorphous nature of the rGO thin film. The UV-Vis spectra revealed that the transparency (> 90%) for the thin film increased with the decrease in the number of laser pulses. The decreased value of ID/IG ratio in the Raman spectra confirmed the rGO formtion on the glass substrate. The electrical properties are studied for the determination of sheet resistance, resistivity and carrier concentration by using silver contact on the thin film. The optoelectric properties reveal that the rGO thin film can be a good n-type transparent conducting electrode (cathode) for the solar cell application.