Large tunnel magnetoresistance in a fully epitaxial double-barrier magnetic tunnel junction of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3

Large tunnel magnetoresistance in a fully epitaxial double-barrier magnetic tunnel junction of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3

We report large tunnel magnetoresistance (TMR) ratios of up to 219% at 300 K and 366% at 3.7 K obtained for a high-quality fully epitaxial double-barrier magnetic tunnel junction (MTJ) composed of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3. The obtained TMR ratios are among the highest values reported in Fe/...

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Veröffentlicht in:AIP advances 2020-08, Vol.10 (8), p.085115-085115-5
Hauptverfasser: Suzuki, Ryota, Tadano, Yuriko, Tanaka, Masaaki, Ohya, Shinobu
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum oxide
Carrier density
Magnesium oxide
Magnetoresistivity
Niobium
Plane waves
Strontium titanates
Transitional aluminas
Tunnel junctions
Tunnel magnetoresistance
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Zusammenfassung:We report large tunnel magnetoresistance (TMR) ratios of up to 219% at 300 K and 366% at 3.7 K obtained for a high-quality fully epitaxial double-barrier magnetic tunnel junction (MTJ) composed of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3. The obtained TMR ratios are among the highest values reported in Fe/MgO/Fe structures. This result may be attributed to the small in-plane wave vectors of the tunneling electrons injected from the Nb-doped SrTiO3 electrode with a small carrier density, demonstrating good compatibility between the Fe-based MTJ and SrTiO3.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0002536