Formation of thermal donor enhanced by oxygen precipitation in silicon crystal
The formation of thermal donors in silicon is investigated using Czochralski silicon crystals grown with different grown-in defect regions, such as voids and nuclei of oxidation-induced stacking faults. It was found that the formation rate of thermal donors during annealing at 450 °C increases with...
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Veröffentlicht in: | AIP advances 2020-04, Vol.10 (4), p.045019-045019-5 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The formation of thermal donors in silicon is investigated using Czochralski silicon crystals grown with different grown-in defect regions, such as voids and nuclei of oxidation-induced stacking faults. It was found that the formation rate of thermal donors during annealing at 450 °C increases with an increase in the density of oxide precipitates in the regions containing different grown-in defects. The thermodynamic model for the formation of thermal donors shows that the electrically inactive oxygen trimers as nuclei of thermal donors in an as-grown crystal increase with an increase in the density of oxide precipitates, suggesting that the formation of the nuclei is enhanced due to silicon self-interstitials emitted by oxygen precipitations during the crystal growth. |
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ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/1.5140206 |