Formation of thermal donor enhanced by oxygen precipitation in silicon crystal

The formation of thermal donors in silicon is investigated using Czochralski silicon crystals grown with different grown-in defect regions, such as voids and nuclei of oxidation-induced stacking faults. It was found that the formation rate of thermal donors during annealing at 450 °C increases with...

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Veröffentlicht in:AIP advances 2020-04, Vol.10 (4), p.045019-045019-5
Hauptverfasser: Torigoe, Kazuhisa, Ono, Toshiaki
Format: Artikel
Sprache:eng
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Zusammenfassung:The formation of thermal donors in silicon is investigated using Czochralski silicon crystals grown with different grown-in defect regions, such as voids and nuclei of oxidation-induced stacking faults. It was found that the formation rate of thermal donors during annealing at 450 °C increases with an increase in the density of oxide precipitates in the regions containing different grown-in defects. The thermodynamic model for the formation of thermal donors shows that the electrically inactive oxygen trimers as nuclei of thermal donors in an as-grown crystal increase with an increase in the density of oxide precipitates, suggesting that the formation of the nuclei is enhanced due to silicon self-interstitials emitted by oxygen precipitations during the crystal growth.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5140206