Visible-light-mediated carrier type modulation at the LaAlO3/SrTiO3 interface
A LaAlO3/SrTiO3 (LAO/STO) heterointerface with the sheet charge density of electrons on the order of magnitude of 1013 e/cm2 was obtained by depositing a 10 unit-cell LAO layer on the TiO2-teminated STO substrate. An obvious persistent photoconductivity effect was observed for the as-prepared LAO/ST...
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Veröffentlicht in: | Applied physics letters 2019-10, Vol.115 (15) |
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Sprache: | eng |
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Zusammenfassung: | A LaAlO3/SrTiO3 (LAO/STO) heterointerface with the sheet charge density of electrons on the order of magnitude of 1013 e/cm2 was obtained by depositing a 10 unit-cell LAO layer on the TiO2-teminated STO substrate. An obvious persistent photoconductivity effect was observed for the as-prepared LAO/STO heterointerface. By way of Hall-like coefficient and magnetoresistance measurements at different light power intensities, it is demonstrated that the mechanism of magnetoresistance changes with the increase in light power density on the sample; more importantly, when the light power intensity is increased to a specific value, 270 mW in this case, the carrier type of the interface is tailored from n-type to p-type, which is probably ascribed to the photoinduced p-type hole dopants and has never been reported at the LAO/STO interface before, thus providing important insights into a controllable heterointerface for oxide-based thin film electronics. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.5119161 |