Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane

Methylsilane-derived fragment ions obtained from a Bernas-type ion source were investigated using a low-energy mass-selected ion beam system. Based on mass-energy analyzer measurements, these ions were determined to be H+, H2+, H3+, CH3+, Si+, and SiCH5+. The SiCH5+ ions were selected and injected i...

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Veröffentlicht in:AIP advances 2019-09, Vol.9 (9), p.095051-095051-4
Hauptverfasser: Yoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Murai, Kensuke, Kiuchi, Masato
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Sprache:eng
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Zusammenfassung:Methylsilane-derived fragment ions obtained from a Bernas-type ion source were investigated using a low-energy mass-selected ion beam system. Based on mass-energy analyzer measurements, these ions were determined to be H+, H2+, H3+, CH3+, Si+, and SiCH5+. The SiCH5+ ions were selected and injected into a Si(111) substrate at 750 °C. The ion energy was 40 eV. This injection led to the formation of a silicon carbide film on the Si substrate. An analysis of this film indicates that this type of ion beam deposition method can efficiently form silicon carbide film.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5116614