Growth, structural characterization and transport study of Bismuth thin films

We report the growth of high quality Bismuth thin films on the (100) oriented Si/SiO2 substrate. These films are characterized by the x-ray diffraction which shows that films are single phase and have preferred orientation along the direction. The x-ray reflectivity measurements of the thin films give film thickness around 52 nm and roughness of approximately 2 nm. The density of the Bismuth thin film is in agreement with the bulk Bismuth. The temperature dependent resistivity measurements show a non-metallic behavior which is attributed to enhanced grain boundary scattering from the relatively small grains of Bismuth thin films.