Low temperature Cu bonding with large tolerance of surface oxidation
A novel method of low temperature all-Cu bonding was developed, which has a large tolerance for Cu surface oxidation and can even bond Cu with a thick oxide layer at 250 °C. It is significant for the chip level bonding because traditional methods have strict requirements for surface quality. The key...
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Veröffentlicht in: | AIP advances 2019-05, Vol.9 (5), p.055127-055127-5 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | A novel method of low temperature all-Cu bonding was developed, which has a large tolerance for Cu surface oxidation and can even bond Cu with a thick oxide layer at 250 °C. It is significant for the chip level bonding because traditional methods have strict requirements for surface quality. The key process is to combine Cu nanoparticle paste and Pt-catalyzed formic acid vapor, which improved the bonding strength of oxidized-Cu by ∼78.5% and is expected to simplify the bonding process. To understand the mechanisms, interfacial analyses of the microstructure and composition were carried out, along with a surface analysis. |
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ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/1.5097382 |