Fabrication of organic thin film transistors for application in flexible sensors
In this study, pentacene based organic thin film transistors were fabricated with PVP and high dielectric constant (k) PVP/TiO2 nanocomposite as the gate dielectric. The PVP/TiO2 nanocomposite dielectric layer consists of poly-4-vinylpheno l(PVP) cross linked with poly(melamine-co-formaldehyde) and...
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| creator | Nair, Shiny Hamrah, Anzalna Raj, Roshna B. Kathiresan, M. Mukundan, T. |
| description | In this study, pentacene based organic thin film transistors were fabricated with PVP and high dielectric constant (k) PVP/TiO2 nanocomposite as the gate dielectric. The PVP/TiO2 nanocomposite dielectric layer consists of poly-4-vinylpheno l(PVP) cross linked with poly(melamine-co-formaldehyde) and high-k TiO2 nanoparticles. The structure, morphology and dielectric properties of the samples were analyzed. Also, the electrical characteristics of organic transistors with PVP dielectric was compared with PVP/TiO2 dielectric. |
| doi_str_mv | 10.1063/1.5093883 |
| format | Conference Proceeding |
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J. ; Mohan, Pillai Aswathy ; John, Honey ; Anju, K. S. ; Jayaraj, M. K.</contributor><creatorcontrib>Nair, Shiny ; Hamrah, Anzalna ; Raj, Roshna B. ; Kathiresan, M. ; Mukundan, T. ; Saji, K. J. ; Mohan, Pillai Aswathy ; John, Honey ; Anju, K. S. ; Jayaraj, M. K.</creatorcontrib><description>In this study, pentacene based organic thin film transistors were fabricated with PVP and high dielectric constant (k) PVP/TiO2 nanocomposite as the gate dielectric. The PVP/TiO2 nanocomposite dielectric layer consists of poly-4-vinylpheno l(PVP) cross linked with poly(melamine-co-formaldehyde) and high-k TiO2 nanoparticles. The structure, morphology and dielectric properties of the samples were analyzed. Also, the electrical characteristics of organic transistors with PVP dielectric was compared with PVP/TiO2 dielectric.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.5093883</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Dielectric properties ; Flexible components ; Melamine ; Morphology ; Nanocomposites ; Nanoparticles ; Semiconductor devices ; Silicon ; Thin film transistors ; Thin films ; Titanium dioxide ; Transistors</subject><ispartof>AIP conference proceedings, 2019, Vol.2082 (1)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). 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K.</contributor><creatorcontrib>Nair, Shiny</creatorcontrib><creatorcontrib>Hamrah, Anzalna</creatorcontrib><creatorcontrib>Raj, Roshna B.</creatorcontrib><creatorcontrib>Kathiresan, M.</creatorcontrib><creatorcontrib>Mukundan, T.</creatorcontrib><title>Fabrication of organic thin film transistors for application in flexible sensors</title><title>AIP conference proceedings</title><description>In this study, pentacene based organic thin film transistors were fabricated with PVP and high dielectric constant (k) PVP/TiO2 nanocomposite as the gate dielectric. The PVP/TiO2 nanocomposite dielectric layer consists of poly-4-vinylpheno l(PVP) cross linked with poly(melamine-co-formaldehyde) and high-k TiO2 nanoparticles. The structure, morphology and dielectric properties of the samples were analyzed. Also, the electrical characteristics of organic transistors with PVP dielectric was compared with PVP/TiO2 dielectric.</description><subject>Dielectric properties</subject><subject>Flexible components</subject><subject>Melamine</subject><subject>Morphology</subject><subject>Nanocomposites</subject><subject>Nanoparticles</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Titanium dioxide</subject><subject>Transistors</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2019</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp90MFKAzEQBuAgCtbqwTcIeBO2JpkkuzlKsSoU9KDgLWSzWU3ZbtYkFX17t7bizdNcvvln-BE6p2RGiYQrOhNEQVXBAZpQIWhRSioP0YQQxQvG4eUYnaS0IoSpsqwm6HFh6uityT70OLQ4xFfTe4vzm-9x67s1ztH0yaccYsJtiNgMQ_e7sDWd-_R153ByfRrNKTpqTZfc2X5O0fPi5ml-Vywfbu_n18vCMgW5YMxZaUFQBTWxnHBbE7BOMmZFI2UNHLhw3DVNWZVlbSQVTFagoKGqtMbAFF3scocY3jcuZb0Km9iPJzWjSkjOgFWjutypZH3--VkP0a9N_NKU6G1jmup9Y__hjxD_oB6aFr4Baq5sSQ</recordid><startdate>20190322</startdate><enddate>20190322</enddate><creator>Nair, Shiny</creator><creator>Hamrah, Anzalna</creator><creator>Raj, Roshna B.</creator><creator>Kathiresan, M.</creator><creator>Mukundan, T.</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20190322</creationdate><title>Fabrication of organic thin film transistors for application in flexible sensors</title><author>Nair, Shiny ; Hamrah, Anzalna ; Raj, Roshna B. ; Kathiresan, M. ; Mukundan, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-22ec6c35193b0c404cb03ce622c5d66b34345e4edd7877ba615268393d197caa3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Dielectric properties</topic><topic>Flexible components</topic><topic>Melamine</topic><topic>Morphology</topic><topic>Nanocomposites</topic><topic>Nanoparticles</topic><topic>Semiconductor devices</topic><topic>Silicon</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Titanium dioxide</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nair, Shiny</creatorcontrib><creatorcontrib>Hamrah, Anzalna</creatorcontrib><creatorcontrib>Raj, Roshna B.</creatorcontrib><creatorcontrib>Kathiresan, M.</creatorcontrib><creatorcontrib>Mukundan, T.</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nair, Shiny</au><au>Hamrah, Anzalna</au><au>Raj, Roshna B.</au><au>Kathiresan, M.</au><au>Mukundan, T.</au><au>Saji, K. J.</au><au>Mohan, Pillai Aswathy</au><au>John, Honey</au><au>Anju, K. S.</au><au>Jayaraj, M. K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Fabrication of organic thin film transistors for application in flexible sensors</atitle><btitle>AIP conference proceedings</btitle><date>2019-03-22</date><risdate>2019</risdate><volume>2082</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>In this study, pentacene based organic thin film transistors were fabricated with PVP and high dielectric constant (k) PVP/TiO2 nanocomposite as the gate dielectric. The PVP/TiO2 nanocomposite dielectric layer consists of poly-4-vinylpheno l(PVP) cross linked with poly(melamine-co-formaldehyde) and high-k TiO2 nanoparticles. The structure, morphology and dielectric properties of the samples were analyzed. Also, the electrical characteristics of organic transistors with PVP dielectric was compared with PVP/TiO2 dielectric.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5093883</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2019, Vol.2082 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_5093883 |
| source | AIP Journals Complete |
| subjects | Dielectric properties Flexible components Melamine Morphology Nanocomposites Nanoparticles Semiconductor devices Silicon Thin film transistors Thin films Titanium dioxide Transistors |
| title | Fabrication of organic thin film transistors for application in flexible sensors |
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