Fabrication of organic thin film transistors for application in flexible sensors

In this study, pentacene based organic thin film transistors were fabricated with PVP and high dielectric constant (k) PVP/TiO2 nanocomposite as the gate dielectric. The PVP/TiO2 nanocomposite dielectric layer consists of poly-4-vinylpheno l(PVP) cross linked with poly(melamine-co-formaldehyde) and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Nair, Shiny, Hamrah, Anzalna, Raj, Roshna B., Kathiresan, M., Mukundan, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this study, pentacene based organic thin film transistors were fabricated with PVP and high dielectric constant (k) PVP/TiO2 nanocomposite as the gate dielectric. The PVP/TiO2 nanocomposite dielectric layer consists of poly-4-vinylpheno l(PVP) cross linked with poly(melamine-co-formaldehyde) and high-k TiO2 nanoparticles. The structure, morphology and dielectric properties of the samples were analyzed. Also, the electrical characteristics of organic transistors with PVP dielectric was compared with PVP/TiO2 dielectric.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5093883