HgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potential

HgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potential

We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2.9–50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and...

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Veröffentlicht in:Low temperature physics (Woodbury, N.Y.) N.Y.), 2019-04, Vol.45 (4), p.412-418
Hauptverfasser: Gudina, S. V., Arapov, Yu. G., Neverov, V. N., Podgornykh, S. M., Popov, M. R., Deriushkina, E. V., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.
Format: Artikel
Sprache:eng
Schlagworte:
Energy spectra
Hopping conduction
Impurities
Quantum Hall effect
Quantum wells
Temperature dependence
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Zusammenfassung:We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2.9–50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and of variable range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are presented in a genuine scale form both for PPT regions and for VRH regime. Decisive role of the long-range random potential (the potential of remote ionized impurities) in the localization-delocalization processes in the QH regime for the system under study is revealed.
ISSN:1063-777X
1090-6517
DOI:10.1063/1.5093521