Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection
In this work, we demonstrated a mid-infrared resonant cavity light emitting diode (RCLED) operating near 4.2 μm at room temperature, grown lattice-matched on a GaSb substrate by molecular beam epitaxy, suitable for CO2 gas detection. The device consists of a 1 λ-thick microcavity containing an InAs...
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Veröffentlicht in: | Applied physics letters 2019-04, Vol.114 (17) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this work, we demonstrated a mid-infrared resonant cavity light emitting diode (RCLED) operating near
4.2
μm at room temperature, grown lattice-matched on a GaSb substrate by molecular beam epitaxy, suitable for CO2 gas detection. The device consists of a
1
λ-thick microcavity containing an InAs0.90Sb0.1 active region sandwiched between two high contrast, lattice–matched AlAs0.08Sb0.92/GaSb distributed Bragg reflector (DBR) mirrors. The electroluminescence emission spectra of the RCLED were recorded over the temperature range from
20 to
300
K and compared with a reference LED without DBR mirrors. The RCLED exhibits a strong emission enhancement due to resonant cavity effects. At room temperature, the peak emission and the integrated peak emission were found to be increased by a factor of
∼
70 and
∼
11, respectively, while the total integrated emission enhancement was
∼
×
33. This is the highest resonant cavity enhancement ever reported for a mid-infrared LED operating at this wavelength. Furthermore, the RCLED also exhibits a superior temperature stability of ∼
0.35
nm/K and a significantly narrower (10×) spectral linewidth. High spectral brightness and temperature stable emission entirely within the fundamental absorption band are attractive characteristics for the development of next generation CO2 gas sensor instrumentation. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.5090840 |