Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition

Plasma assisted atomic oxygen deposition was used to grow polycrystalline ferroelectric Hf1-xZrxO2 (x = 0.5–0.7) on technologically important (100) Germanium substrates showing sharp crystalline interfaces free of interfacial amorphous layers and strong evidence for the presence of a predominately o...

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Veröffentlicht in:Applied physics letters 2019-03, Vol.114 (11)
Hauptverfasser: Zacharaki, C., Tsipas, P., Chaitoglou, S., Fragkos, S., Axiotis, M., Lagoyiannis, A., Negrea, R., Pintilie, L., Dimoulas, A.
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Sprache:eng
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Zusammenfassung:Plasma assisted atomic oxygen deposition was used to grow polycrystalline ferroelectric Hf1-xZrxO2 (x = 0.5–0.7) on technologically important (100) Germanium substrates showing sharp crystalline interfaces free of interfacial amorphous layers and strong evidence for the presence of a predominately orthorhombic phase. The electrical properties, evaluated using metal-ferroelectric-semiconductor (MFS) capacitors, show symmetric and robust ferroelectric hysteresis with weak or no wake-up effects. The MFS capacitors with x = 0.58 show very large remanent polarization up to 34.4 μC/cm2 or 30.6 μC/cm2 after correction for leakage and parasitics, combined with good endurance reaching 105 cycles at a cycling field of 2.3 MV/cm. The results show good prospects for the fabrication of Ge ferroelectric field effect transistors (FeFETs) for use in 1 T FeFET embedded nonvolatile memory cells with improved endurance.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5090036