Droplet generation at Hele-Shaw microfluidic T-junction
We proposed the combined numerical and experimental study of the dynamics of droplets generation at shallow microfluidic T-junction, where the flow is strongly confined in the vertical direction. The numerical simulation is performed by employing quasi-2D Hele-Shaw approximation with an interface ca...
Gespeichert in:
Veröffentlicht in: | Physics of fluids (1994) 2019-02, Vol.31 (2) |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We proposed the combined numerical and experimental study of the dynamics of droplets generation at shallow microfluidic T-junction, where the flow is strongly confined in the vertical direction. The numerical simulation is performed by employing quasi-2D Hele-Shaw approximation with an interface capturing procedure based on coupled Level-Set and Volume-of-Fluid methods. We investigate the effect of the capillary number, Ca, the channel geometry (cross section aspect ratio, χ), and the flow rate (disperse-to-continuous phases) ratio, Γ, on the dynamics of the droplet breakup. Depending on Ca, three distinct flow regimes are identified: squeezing, tearing and jetting. In the squeezing regime at low Ca, the size of the generated droplets depends on χ and Γ, while it is almost insensitive to Ca in agreement to previous studies. In the tearing regime at moderate Ca, the droplet size decreases as ∼Ca−1/3, while it is only a weak function of χ and Γ. Finally, in the jetting regime, the steady co-flow of both phases takes place at high enough Ca. The numerical predictions based on the Hele-Shaw flow approximation are in excellent agreement with our in-house experimental results, demonstrating that the proposed approach can be effectively used for computationally inexpensive and adequately accurate modeling of biphasic flows in shallow microfluidic devices. |
---|---|
ISSN: | 1070-6631 1089-7666 |
DOI: | 10.1063/1.5086808 |