Controlled growth and magnetic property of a-plane-oriented Mn3Sn thin films

Controlled growth and magnetic property of a-plane-oriented Mn3Sn thin films

Highly a-plane-oriented Mn3Sn thin films were grown on m-plane sapphire substrates with low-temperature grown Mn3+xSn buffer layers by sputtering deposition technique, and their crystallinity and magnetic properties were investigated by X-ray diffraction and SQUID magnetometer, respectively. The cry...

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Veröffentlicht in:AIP advances 2019-03, Vol.9 (3), p.035109-035109-4
Hauptverfasser: Oh, Seungjun, Morita, Tadashi, Ikeda, Tomoki, Tsunoda, Masakiyo, Oogane, Mikihiko, Ando, Yasuo
Format: Artikel
Sprache:eng
Schlagworte:
Buffer layers
Coercivity
Crystal structure
Crystallography
Crystals
Domains
Magnetic properties
Magnetic saturation
Magnetism
Magnetization
Sapphire
Single crystals
Substrates
Superconducting quantum interference devices
Thin films
X-ray diffraction
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Beschreibung
Zusammenfassung:Highly a-plane-oriented Mn3Sn thin films were grown on m-plane sapphire substrates with low-temperature grown Mn3+xSn buffer layers by sputtering deposition technique, and their crystallinity and magnetic properties were investigated by X-ray diffraction and SQUID magnetometer, respectively. The crystallographic orientations of Mn3Sn domains are found to be sensitively influenced by substrate temperature, thickness and composition ratio of Mn3+αSn buffer layer. The highly a-plane-oriented Mn3Sn film shows slightly different magnetization behavior from randomly oriented Mn3Sn film, while the saturation magnetization Ms and coercivity of the highly a-plane-oriented Mn3Sn film are corresponding to that of single crystal bulk.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5079688