Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism

We investigate the spin transport and ferromagnetic resonance properties of giant magnetoresistance (GMR) Co/Cu-Ni multilayers with variable levels of Ni doping in the Cu spacer. We present an experimental evidence for a magnetic-to-diamagnetic transition in the atomic magnetic moment of Ni in the C...

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Veröffentlicht in:Journal of applied physics 2019-01, Vol.125 (2)
Hauptverfasser: Tykhonenko-Polishchuk, Yu. O., Polishchuk, D. M., Polek, T. I., Yaremkevych, D. D., Kravets, A. F., Tovstolytkin, A. I., Timoshevskii, A. N., Korenivski, V.
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Sprache:eng
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Zusammenfassung:We investigate the spin transport and ferromagnetic resonance properties of giant magnetoresistance (GMR) Co/Cu-Ni multilayers with variable levels of Ni doping in the Cu spacer. We present an experimental evidence for a magnetic-to-diamagnetic transition in the atomic magnetic moment of Ni in the Cu matrix for concentrations below 15 at. % Ni. As its concentration is increased, Ni atoms turn into spin scattering centers, which is manifested experimentally as a step-like change in the GMR of the multilayers. This behavior is observed in multilayers with gradient-doped Cu spacers, where only the inner region was doped with Ni. In the uniformly doped spacers, the GMR decreases monotonously with increasing Ni content, indicating that Ni atoms are magnetic and act as spin relaxation centers in the entire dopant-concentration range studied. We explain the difference in the observed GMR behavior due to a strong magnetic proximity effect in the uniform spacers, which is efficiently suppressed in the gradient spacers. The observed magnetic phase transition is fully supported by our detailed ab initio calculations, taking into consideration structural relaxation in the system as well as potential Ni clustering. Controlling the loss or gain of the atomic magnetism for a specific dopant can be a tool in probing and controlling spin relaxation in materials and devices for spin-valve and spin-torque based applications.
ISSN:0021-8979
1089-7550
1089-7550
DOI:10.1063/1.5066301