Analysis of interface trap charges and densities using capacitance-voltage (C-V) and conductance voltage(G-V) methods in steep retrograded Al2O3, ZrO2 and HfO2 based gate all around FinFETs

In this paper, a simulation study has been carried out to determine the effects of different gate oxide on the electrical performance of a Silicon channel steep retrograded doped n-type Gate All Around FinFET (GAA-FinFETs). The different oxides used were Hafnium Oxide (HfO2) and Aluminum Oxide (Al2O...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Thakur, Rajiv Ranjan, Singh, Pragati
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum oxide Computer simulation Hafnium oxide Resistance Silicon dioxide Silicon oxides Simulation Threshold voltage Zirconium dioxide
Online-Zugang:	Volltext
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