Analysis of interface trap charges and densities using capacitance-voltage (C-V) and conductance voltage(G-V) methods in steep retrograded Al2O3, ZrO2 and HfO2 based gate all around FinFETs

In this paper, a simulation study has been carried out to determine the effects of different gate oxide on the electrical performance of a Silicon channel steep retrograded doped n-type Gate All Around FinFET (GAA-FinFETs). The different oxides used were Hafnium Oxide (HfO2) and Aluminum Oxide (Al2O3) in contrast with the Silicon Oxide (SiO2). The simulation results show that the HfO2 can significantly increase the On-State current and the threshold voltage of the device compared to the conventional oxides. The results also show a remarkable improvement in the logarithmic ratio of the On-state to the Off-state currents of the device in order of 108. The simulation was carried out using Sentaurus TCAD and Mathematical calculations were done using MATLAB.